“SELFA™” , enabling new semiconductor process by highthermal resistance and debonding technology.

What is SELFA™?

SELFA™ is a UV release tape that achieves strong adhesion and easy peeling. By UV irradiation, N2 gas is generated between the tape and the subject, nullifying adhesion strength and allowing it to be easily peeled off.

Point!

It can be easily peeled off without causing any damage to thinly polished wafers.

SELFA™ image

When is SELFA™ used?

SELFA™ is mainly used in the manufacturing of semiconductor wafers and chips. Currently, we offer a lineup of three types of products for various processes such as package manufacturing, wafer support, and plating processes.

Point!

Both single-sided and double-sided types are available based on different applications.

SELFA™ Lineup
SEKISUI Temporary Bonding and Debonding Tape SELFA™

The Core Technology of "SELFA™"

Looking for a high thermal resistant temporary bonding material

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Thermal Resistant

Thermal Resistant

  • Industry-leading 260°C thermal resistance specifications
  • Enables implementation of new processes such as reflow

Worried about damage to wafers

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Easy Peeling

Easy Peeling

  • Damage-free peelingtechnology using gas generation
  • High compatibility for ultra-thin devices

Need to eliminate the residue during thermal processes

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Low Residue

Low Residue

  • Residue-freeusing Pre UV technologyPre UV
  • Wide process window

SELFA™'s Peeling-off Technology

SELFA™'s peeling-off demo video

You may find an advanced technology not found in other companies' products, enabling easy peeling-off without damaging the delicate wafer surface.

Two-step UV Irradiation

1Pre UV Curing
Pre UV Curing

The adhesive strength of conventional UV tapes increases during thermal treatment and does not decrease significantly after UV exposure, making it difficult to be peeled off, leading to residue issues.

By curing the adhesive layer with Pre UV, SELFA™ significantly reduces adhesive strength which will not climb up sharply even after thermal treatment, making it much easier to be peeled off by much less force leaving much less residue.

2Gas Generation
Gas Generation

During the UV irradiation, nitrogen gas is generated between SELFA™ and the glass carrier. The gas region expands and eventually spreads across the entire surface.

After the UV irradiation, the carrier glass can be easily removed with almost no force.

Comparison of Processes between SELFA™ and Liquid Materials

Using SELFA™ significantly shortens the Lamination and peeling processes.

process flow

SELFA™

SELFA™ Lamination
SELFA™ Bonding
SELFA™ Debonding
SELFA™ Peeling

SEKISUIProduct Development Story

Continuing to support the evolution
of semiconductor processes with
innovative technology for
'adhesion and peeling'―
SELFA™

Former Director of the Research & Development Institute
(retired in 2019),
High Performance Plastics Company Current Representative of Science Lab Ishizue

Akira Nakasuga

Chief Engineer, Electronics Materials Development Center
Research & Development Institute
High Performance Plastics Company

Toshio Takahashi

SELFA™Lineup

Double Sided
Thermal Resistant
SELFA™ HW Series

BGDicing Process

Double Sided Thermal Resistant SELFA™ HW Series
  • High resistance to heat and chemicals
  • N2 Gas-release debonding mechanism results in damage free debonding
  • Tape type adhesive supported glass carrier enables better
    →handling capabilities
Product details

Single Sided Thermal Resistant SELFA™ HS Series

Device protection during chemical processesWarpage suppression during thermal processes

Single Sided Thermal Resistant SELFA™ HS Series
  • High resistance to heat and chemicals
  • High adhesion, low residue
Product details

Single Sided Self Release SELFA™ MP Series

Device protection during plating processes

Single Sided Self Release SELFA™ MP Series
  • UV self-releasing function
    →Easy peeling-off after the plating process
Product details

SELFA™ Structure and Properties

Items and Conditions HW Series HS Series MP Series
Thermal Resistance 260°C / Reflow 250°C / Reflow 80°C / 30min.
220°C / 2hr 220°C / 2hr
Adhesion Strength (N/inch)
Initial → Pre UV
Wafer Side SUS: 10.50.01 SUS: 3.830.08 SUS: 17.50
Si: 0.080.02 Si: 0.060.02 Si: 16.10
- Cu: 4.510.10 Au: 13.50
Carrier Side Glass: 0.06<0.01 - -

Application Examples

CMOS Image Sensor

CMOS Image Sensor

  • SELFA™ HW
TSV

TSV

  • SELFA™ HW
  • SELFA™ HS
EMI

EMI

  • SELFA™ HS
PoP

PoP

  • SELFA™ HW
  • SELFA™ HS
Fan Out / Embedded Substrate

Fan Out / Embedded Substrate

  • SELFA™ HW
  • SELFA™ HS
  • SELFA™ MP
Power Device

Power Device

  • SELFA™ MP

Process Automation of Double-sided SELFA™

Compatible with fully automated processes, contributing to improve productivity and reduce environmental impact.

By partnering with equipment manufacturers, we can build fully automated equipment. Significant productivity improvements and reductions in environmental impact can be achieved.

Equipment Introduction

Wafer Bonder
①Wafer Bonder
Takatori Corporation
WSM-200B
Wafer Debonder
②Wafer Debonder
Takatori Corporation
WSR-200

Reuse of Glass Carrier

By utilizing SELFA™, glass carriers can be reused more than twice much as before, also better for SDGs.

Carrier Glass Reusability

SELFA™ does not cause damage during UV irradiation, and is superior in terms of glass carriers’ recycling.

SELFA™ Liquid
Times of reuse Over 20 times Over 10 times
Stripping method UV Lamp
UV Laser
Various Lasers
Reuse methods Solvent cleaning is the mainstream Solvent cleaning, polishing, etc.
Glass damage No
SELFA™ Glass damage
Yes
Liquid Glass damage
Reason SELFA™ Reason
Significant less damage by UV lamp irradiation
Liquid Reason
More damage caused by laser ablation

SEKISUIProduct Development Story

Continuing to support the evolution
of semiconductor processes with
innovative technology for
'adhesion and peeling'―
SELFA™

Former Director of the Research & Development Institute
(retired in 2019),
High Performance Plastics Company Current Representative of Science Lab Ishizue

Akira Nakasuga

Chief Engineer, Electronics Materials Development Center
Research & Development Institute
High Performance Plastics Company

Toshio Takahashi