High-Heat-Resistance Temporary Fixing UV Tape SELFA™ Series
A high-heat-resistance, high-adhesion temporary fixing tape enabling easy removal through UV irradiation
A UV release tape that combines strong adhesion with excellent peelability in semiconductor wafer and chip processing. They utilize proprietary technology to generate gas under UV irradiation, enabling clean removal without causing wafer damage. With excellent heat and chemical resistance, the lineup is suitable for diverse manufacturing processes.
When manufacturing semiconductor wafers, the wafers must be firmly fixed during the polishing process, and this process poses a risk of damaging the expensive wafers when removing the holding materials.
UV irradiated release tape with high adhesion and easy release
The SELFA series is a removable UV tape that achieves strong adhesion and easy peeling. Gas is generated between the tape and the adhered by UV irradiation, and the tape can be easily removed with no adhesion, making it possible to process thinly polished wafers without damage. We will propose the optimal grade from a wide lineup such as single-sided SELFA HS with high-heat resistance, SELFA HW heat-resistant temporary bonding materials, and SELFA MP with excellent chemical resistance.
Technical information
Technical overview
Heat resistivity
Heat resistance of 220°C × 2hours is guaranteed. Excellent low-residue properties. Proven record of use in reflow, annealing, sputtering, CVD, and other heat processes.
Chemical resistivity
Adaptability to a wide variety of chemicals Electroless plating, roughening, resist exposure/development, chemical cleaning, etc.
Gas debonding
Sekisui's proprietary "gas debonding" technology realizes easy peeling from adherends. We have a track record of peeling from sensitive substrates such as glass and wafers.
Easy-handling
Easy to handle, tape-type solution Process construction is possible with general-purpose and inexpensive manufacturing equipment.
Technology details
Heat resistivityThe heat resistance is 220°C×2hours or 260°C×5minutes, with the aim of further improving heat resistance.
No residue, even when processing at high temperatures
Chemical resistivityAdaptability to a wide variety of chemicals.
Item
Solvent
Temperature(°C)
Process time (sec)
Weight loss (wt%)
1
Tetra Hydro Furfuryl Alcohol 75-100%
60
420
≤１
2
NMP
50
3000
≤１
3
KOH 1%
25
90
≤１
4
CuSO4 18%
4200
≤１
5
H2SO4 5-10%
4200
≤１
6
HCI 6%
4200
≤１
7
Acetic Acid 10%
60
≤１
8
HF 0.5%
900
≤１
9
NH4OH 30%
900
≤１
10
PGME
900
≤１
11
PGMEA
900
≤１
12
TMAH 2.38%
7200
≤１
13
IPA
900
≤１
14
C6H8O7 5%
900
≤１
15
H2O2 30%
900
≤１
16
KOH 5%
900
≤１
17
DMSO
900
≤１
Gas debondingUnique gas generation technology enables debonding with less stress.
UV reaction of SELFA
Easy-handling
Applicable to adherends with special surface geometries. (e.g. MEMS, ubump, Taiko™ wafer, etc.)
Simple process control enables good TTV performance.
The simplicity of the manufacturing process makes it more cost-effective than other temporary bonding technologies (e.g. laser debond).
Using tape type adhesive to support glass carrier enables better handling capabilities. N2 Gas-release debonding mechanism results in damage free debonding. High resistance to heat and chemicals.
Process
Laminating
Bonding
Pre UV
BG
Thermal Process
Dicing Tape
Post UV & DB
De-Taping
Evaluation results
Ⅰ．Mirror Wafer TTV Evaluation after BG
Evaluation Method
TTV Mapping Result
【Average】 Thickness : 24.4μm／ TTV : 2.9μm
n=1
n=2
n=3
n=4
n=5
Thk:25.1μm TTV:3.4μm
Thk:24.5μm TTV:2.8μm
Thk:24.7μm TTV:2.9μm
Thk:24.3μm TTV:2.7μm
Thk:23.4μm TTV:2.9μm
Our unique “PreUV technology” can provide industry’s highest level TTV controllability.
<3μm@12” wafer
Ⅱ．Residue After Thermal Process＜Oven and De-taping evaluation＞
Point :
Thermal resistant
Equipment & Conditions
Maker: ETAC
Model: CSO-603BF
Temp: 180〜220°C
Time: 1〜2hr
Wafer & Sample
8inch Bump TEG Wafer
Results
180°C
200°C
220°C
1hr
2hr
No residue on the patterned TEG wafer after a thermal stress of 220°C 2hr.
Single Sided Thermal Resistant SELFA™ HS Series
Characteristic：
Thermal Resistance
Chemical Resistance
Low Residue
Supports and protects devices during thermal processes such as reflow, CVD, and sputtering.
Process
Laminating
Pre UV
BG
Transporting
Thermal Processes
De-Taping
Thermal Resistance Evaluation (Void)
Hot Plate Evaluation
Sample
Equipment & Conditions
Maker: NINOS
Model: ND-3H
Temp: 180-250°C
Time: 30-180min
Results
Peeling-off Ability After Heating
30min
60min
120min
180min
180°C
OK
OK
OK
OK
220°C
OK
OK
OK
OK
250°C
OK
OK
OK
OK
The data shown above is measurement value, not guaranteed value.
Adhesive Strength After Heating
Wafer State After Heating
In hot plate evaluations, it has been confirmed that no void occurs during thermal treatment and no residue is generated during peeling, even at up to 220°C for 180 minutes.
Single sided Self Release SELFA™ MP Series
Characteristic：
Easy-peeling
SELFA™ MP is used for protecting the backside of wafers during plating processes. UV irradiation generates gas, allowing it to be peeled off from the subject easily.
The Wafer Protection Process During Electroless Plating Treatment (Electroless Plating Method)
Tape lamination
Acid, alkali plating process
UV irradiation
After de-taping
SELFA™ MP has excellent resistance to strong acids and strong alkalis during the plating process, and after protecting the wafer, it can be peeled off with low stress.
Voids and Residue Results
Point：
Easy-peeling
Wafer After Au Plating
No void, no edge delamination
Organic Residue Inspection @8’ Wafer
No residue was observed after peeling off SELFA™ MP
Document download
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Catalog 〈Electronics〉：High-Heat-Resistance Temporary Fixing UV Tape SELFA™ Series
Heat resistivity
Chemical resistivity
Gas debonding
Easy-handling
